{"id":26222,"date":"2023-03-20T20:00:31","date_gmt":"2023-03-20T19:00:31","guid":{"rendered":"https:\/\/www.hilase.cz\/?p=26222"},"modified":"2024-05-21T10:59:36","modified_gmt":"2024-05-21T08:59:36","slug":"on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation","status":"publish","type":"post","link":"https:\/\/www.hilase.cz\/en\/on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation\/","title":{"rendered":"On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":10,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"categories":[176],"class_list":["post-26222","post","type-post","status-publish","format-standard","hentry","category-paper"],"acf":{"obrazek":{"ID":26249,"id":26249,"title":"Prahy thumbnail","filename":"Prahy-thumbnail.png","filesize":36397,"url":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","link":"https:\/\/www.hilase.cz\/prahy-tani-polovodicu-pri-ozarovani-nanosekundovymi-laserovymi-pulzy\/prahy-thumbnail\/","alt":"","author":"15","description":"","caption":"","name":"prahy-thumbnail","status":"inherit","uploaded_to":26220,"date":"2023-03-20 11:48:31","modified":"2023-03-20 11:48:31","menu_order":0,"mime_type":"image\/png","type":"image","subtype":"png","icon":"https:\/\/www.hilase.cz\/wp-includes\/images\/media\/default.png","width":314,"height":166,"sizes":{"thumbnail":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail-175x166.png","thumbnail-width":175,"thumbnail-height":166,"medium":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","medium-width":314,"medium-height":166,"medium_large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","medium_large-width":314,"medium_large-height":166,"large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","large-width":314,"large-height":166,"1536x1536":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","1536x1536-width":314,"1536x1536-height":166,"2048x2048":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","2048x2048-width":314,"2048x2048-height":166,"image":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","image-width":314,"image-height":166,"gallery":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail-273x166.png","gallery-width":273,"gallery-height":166,"card":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","card-width":314,"card-height":166,"square":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy-thumbnail.png","square-width":314,"square-height":166}},"obsah":[{"acf_fc_layout":"text","text":"<p>The HiLASE Centre&#8217;s research team has published a new paper <strong><em>On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation<\/em><\/strong> in the <a href=\"https:\/\/www.mdpi.com\/journal\/applsci\"><em>Applied Sciences<\/em><\/a> journal.<\/p>\n<p>The lead author is <strong>Ji\u0159\u00ed Ber\u00e1nek<\/strong> (Ph.D. Student: Laser Matter Interaction); this is the last publication to complete his Ph.D. thesis. His co-authors for this paper were <strong>Alexander V. Bulgakov<\/strong> (Nanomaterials Team Leader) and <strong>Nadezhda M. Bulgakova<\/strong> (Head of the <a href=\"https:\/\/www.hilase.cz\/en\/research-programmes\/scientific-laser-applications\/\">Scientific Laser Applications<\/a> Department and Laser-Matter Interaction Team Leader).<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter\" src=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy.png\" alt=\"Paper\" width=\"835\" height=\"437\" \/><\/p>\n<p>Abstract:<br \/>\nIn this work, a unified numerical model is used to determine the melting thresholds and to investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established that enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).<\/p>\n<p><strong><a href=\"https:\/\/www.mdpi.com\/2076-3417\/13\/6\/3818\">Read the full article.<\/a><\/strong><\/p>\n","oddelovace":"none"}]},"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v23.9 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation - HiLASE<\/title>\n<meta name=\"description\" content=\"HiLASE has published a paper On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation in Applied Sciences.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.hilase.cz\/en\/on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation\" \/>\n<meta property=\"og:description\" content=\"The HiLASE Centre&#039;s research team has published a new paper On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation in the Applied Sciences journal.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.hilase.cz\/en\/on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation\/\" \/>\n<meta property=\"og:site_name\" content=\"HiLASE\" \/>\n<meta property=\"article:published_time\" content=\"2023-03-20T19:00:31+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2024-05-21T08:59:36+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy.png\" \/>\n\t<meta property=\"og:image:width\" content=\"1200\" \/>\n\t<meta property=\"og:image:height\" content=\"628\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"Majka Thunov\u00e1\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:title\" content=\"On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation\" \/>\n<meta name=\"twitter:description\" content=\"The HiLASE Centre&#039;s research team has published a new paper On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation in the Applied Sciences journal.\" \/>\n<meta name=\"twitter:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Prahy.png\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Majka Thunov\u00e1\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.hilase.cz\/en\/on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation\/\",\"url\":\"https:\/\/www.hilase.cz\/en\/on-the-melting-thresholds-of-semiconductors-under-nanosecond-pulse-laser-irradiation\/\",\"name\":\"On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation - 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