{"id":27261,"date":"2023-05-24T09:02:56","date_gmt":"2023-05-24T07:02:56","guid":{"rendered":"https:\/\/www.hilase.cz\/?p=27261"},"modified":"2024-05-21T10:51:34","modified_gmt":"2024-05-21T08:51:34","slug":"ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures","status":"publish","type":"post","link":"https:\/\/www.hilase.cz\/en\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/","title":{"rendered":"Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":15,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"categories":[176],"class_list":["post-27261","post","type-post","status-publish","format-standard","hentry","category-paper"],"acf":{"obrazek":{"ID":27253,"id":27253,"title":"N\u00e1vrh bez n\u00e1zvu (14)","filename":"Navrh-bez-nazvu-14-1.png","filesize":79111,"url":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","link":"https:\/\/www.hilase.cz\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/navrh-bez-nazvu-14-2\/","alt":"","author":"15","description":"","caption":"","name":"navrh-bez-nazvu-14-2","status":"inherit","uploaded_to":27258,"date":"2023-05-09 09:05:28","modified":"2023-05-09 09:45:04","menu_order":0,"mime_type":"image\/png","type":"image","subtype":"png","icon":"https:\/\/www.hilase.cz\/wp-includes\/images\/media\/default.png","width":314,"height":166,"sizes":{"thumbnail":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1-175x166.png","thumbnail-width":175,"thumbnail-height":166,"medium":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","medium-width":314,"medium-height":166,"medium_large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","medium_large-width":314,"medium_large-height":166,"large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","large-width":314,"large-height":166,"1536x1536":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","1536x1536-width":314,"1536x1536-height":166,"2048x2048":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","2048x2048-width":314,"2048x2048-height":166,"image":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","image-width":314,"image-height":166,"gallery":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1-273x166.png","gallery-width":273,"gallery-height":166,"card":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","card-width":314,"card-height":166,"square":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-14-1.png","square-width":314,"square-height":166}},"obsah":[{"acf_fc_layout":"text","text":"<p>Read a new paper published in the <em><a href=\"https:\/\/www.mdpi.com\/journal\/materials\">Materials<\/a> <\/em>journal collaborated on by <strong>Alexander V. Bulgakov<\/strong> (Nanomaterials team leader), <strong>Ji\u0159\u00ed Ber\u00e1nek<\/strong> (Ph.D. Student: Laser-matter interaction), <strong>Yoann Levy<\/strong> (deputy head of Scientific Laser Applications and team leader of Laser material processing), <strong>Martin Zukerstein<\/strong> (postdoctoral researcher: Laser material processing) and <strong>Nadezhda M. Bulgakova<\/strong> (head of <a href=\"https:\/\/www.hilase.cz\/en\/vyzkumne-programy\/scientific-laser-applications\/\">Scientific Laser Applications<\/a> and team leader of Laser-matter interaction).<\/p>\n<p><img decoding=\"async\" src=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Ultrafast-Infrared-Laser-Crystallization-of-Amorphous-SiGe-Multilayer-Structures.png\" alt=\"\" \/><\/p>\n<p>They worked on this study titled <strong><em>Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures<\/em><\/strong> with Vladimir A. Volodin (<a href=\"https:\/\/www.isp.nsc.ru\/en\/\">Rzhanov Institute of Semiconductor Physics<\/a>, Russian Academy of Sciences), Yuzhu Cheng (<a href=\"https:\/\/english.nsu.ru\/\">Novosibirsk State University<\/a>), Siva S. Nagisetty (<a href=\"https:\/\/www.coherent.com\/\">Coherent LaserSystems<\/a>) and Alexander A. Popov (<a href=\"https:\/\/mipt.ru\/english\/\">Institute of Physics and Technology<\/a>, Russian Academy of Sciences).<\/p>\n<p>Silicon\u2013germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si\u2013Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Similar crystallization regimes were observed for both single-shot and multi-shot conditions, although at lower fluences and with a lower selectivity in the latter case. A theoretical analysis was carried out based on the laser energy absorption mechanisms, thermal stresses, and non-thermal effects.<\/p>\n<p><a href=\"https:\/\/www.mdpi.com\/1996-1944\/16\/9\/3572\">Read the full article.<\/a><\/p>\n","oddelovace":"none"}]},"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v23.9 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures - HiLASE<\/title>\n<meta name=\"description\" content=\"Read a new paper published in the Materials journal collaborated on by HiLASIANS from the Scientific Laser Development department.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.hilase.cz\/en\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures\" \/>\n<meta property=\"og:description\" content=\"Read a new paper published in the Materials journal collaborated on by HiLASIANS from the Scientific Laser Development department.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.hilase.cz\/en\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/\" \/>\n<meta property=\"og:site_name\" content=\"HiLASE\" \/>\n<meta property=\"article:published_time\" content=\"2023-05-24T07:02:56+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2024-05-21T08:51:34+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Ultrafast-Infrared-Laser-Crystallization-of-Amorphous-SiGe-Multilayer-Structures.png\" \/>\n\t<meta property=\"og:image:width\" content=\"1200\" \/>\n\t<meta property=\"og:image:height\" content=\"628\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"Lucka \u0160t\u011bp\u00e1nkov\u00e1\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:title\" content=\"Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures\" \/>\n<meta name=\"twitter:description\" content=\"Read a new paper published in the Materials journal collaborated on by HiLASIANS from the Scientific Laser Development department.\" \/>\n<meta name=\"twitter:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Ultrafast-Infrared-Laser-Crystallization-of-Amorphous-SiGe-Multilayer-Structures.png\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Lucka \u0160t\u011bp\u00e1nkov\u00e1\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.hilase.cz\/en\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/\",\"url\":\"https:\/\/www.hilase.cz\/en\/ultrafast-infrared-laser-crystallization-of-amorphous-si-ge-multilayer-structures\/\",\"name\":\"Ultrafast Infrared Laser Crystallization of Amorphous Si\/Ge Multilayer Structures - 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