{"id":29949,"date":"2023-11-01T20:00:36","date_gmt":"2023-11-01T19:00:36","guid":{"rendered":"https:\/\/www.hilase.cz\/?p=29949"},"modified":"2024-05-20T09:08:15","modified_gmt":"2024-05-20T07:08:15","slug":"non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting","status":"publish","type":"post","link":"https:\/\/www.hilase.cz\/en\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/","title":{"rendered":"Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":15,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"categories":[176],"class_list":["post-29949","post","type-post","status-publish","format-standard","hentry","category-paper"],"acf":{"obrazek":{"ID":29945,"id":29945,"title":"N\u00e1vrh bez n\u00e1zvu (20)","filename":"Navrh-bez-nazvu-20-2.png","filesize":74441,"url":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","link":"https:\/\/www.hilase.cz\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/navrh-bez-nazvu-20-3\/","alt":"","author":"15","description":"","caption":"","name":"navrh-bez-nazvu-20-3","status":"inherit","uploaded_to":29944,"date":"2023-10-30 09:58:32","modified":"2023-10-30 09:58:32","menu_order":0,"mime_type":"image\/png","type":"image","subtype":"png","icon":"https:\/\/www.hilase.cz\/wp-includes\/images\/media\/default.png","width":314,"height":166,"sizes":{"thumbnail":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2-175x166.png","thumbnail-width":175,"thumbnail-height":166,"medium":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","medium-width":314,"medium-height":166,"medium_large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","medium_large-width":314,"medium_large-height":166,"large":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","large-width":314,"large-height":166,"1536x1536":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","1536x1536-width":314,"1536x1536-height":166,"2048x2048":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","2048x2048-width":314,"2048x2048-height":166,"image":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","image-width":314,"image-height":166,"gallery":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2-273x166.png","gallery-width":273,"gallery-height":166,"card":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","card-width":314,"card-height":166,"square":"https:\/\/www.hilase.cz\/wp-content\/uploads\/Navrh-bez-nazvu-20-2.png","square-width":314,"square-height":166}},"obsah":[{"acf_fc_layout":"text","text":"

Researchers from the HiLASE Centre have contributed to a new paper published in the Frontiers in Nanotechnology<\/a><\/em> journal. Among the co-authors are HiLASIANS from different teams and departments: Inam Mirza<\/a><\/strong> (Team Leader: Pulsed Laser Deposition), Alexander V. Bulgakov<\/strong> (Team Leader: Nanomaterials), Hana Tur\u010di\u010dov\u00e1<\/strong> (Senior Researcher: Harmonaics generation), Ond\u0159ej Nov\u00e1k<\/strong> (Team Leader: Non-linear optics), Ji\u0159\u00ed Mu\u017e\u00edk<\/a><\/strong> (Team Leader: Thin-disk lasers), Martin Smr\u017e<\/a><\/strong> (head of Advanced Laser Development<\/a>), Tom\u00e1\u0161 Mocek<\/a><\/strong> (head of HiLASE Centre) a Nadezhda M. Bulgakova<\/a><\/strong> (head of Scientific Laser Applications<\/a>).<\/p>\n

Other institutions represented in the team of authors of the paper titled Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting <\/em><\/strong>include home institutions University of Pardubice<\/a> and Brno University of Technology<\/a> (Hanna Sopha, Jan M. Macak), as well as international Kutateladze Institute of Thermophysics, Novosibirsk State University and Rzhanov Institute of Semiconductor Physics (Sergey V. Starinskiy, Vladimir A. Volodin).<\/p>\n

\"\"<\/p>\n

As-prepared nanostructured semiconductor materials are usually found in an amorphous form, which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities. The most utilized method is thermal annealing in a furnace, which however is time- and energy-consuming and not applicable for low-temperature melting substrates. An alternative is laser annealing, which can be carried out in a relatively short time and, additionally, offers the possibility of annealing localized areas. However, laser-annealed nanostructures are often distorted by melting, while preserving the as-prepared morphology is essential for practical applications. In this work, we analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures: anodic TiO2 nanotube layers and Ge\/Si multilayer stacks. For both cases, regimes of crystallization have been found, which yield in preserving the initial nanomaterial morphologies without any melting signs. On these examples, ultrafast non-thermal mechanisms of structural material transformation are discussed, which can provide new opportunities for conversion of amorphous semiconductor nanomaterials into a desired crystalline form that is of high demand for existing and emerging technologies.<\/p>\n

Read the full article.<\/a><\/strong><\/p>\n","oddelovace":"none"}]},"yoast_head":"\nNon-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting - HiLASE<\/title>\n<meta name=\"description\" content=\"Researchers from the HiLASE Centre have contributed to a new paper published in the Frontiers in Nanotechnology journal.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.hilase.cz\/en\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting\" \/>\n<meta property=\"og:description\" content=\"Researchers from the HiLASE Centre have contributed to a new paper published in the Frontiers in Nanotechnology journal.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.hilase.cz\/en\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/\" \/>\n<meta property=\"og:site_name\" content=\"HiLASE\" \/>\n<meta property=\"article:published_time\" content=\"2023-11-01T19:00:36+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2024-05-20T07:08:15+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting.png\" \/>\n\t<meta property=\"og:image:width\" content=\"1200\" \/>\n\t<meta property=\"og:image:height\" content=\"628\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"Lucka \u0160t\u011bp\u00e1nkov\u00e1\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:title\" content=\"Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting\" \/>\n<meta name=\"twitter:description\" content=\"Researchers from the HiLASE Centre have contributed to a new paper published in the Frontiers in Nanotechnology journal.\" \/>\n<meta name=\"twitter:image\" content=\"https:\/\/www.hilase.cz\/wp-content\/uploads\/Non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting.png\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Lucka \u0160t\u011bp\u00e1nkov\u00e1\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.hilase.cz\/en\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/\",\"url\":\"https:\/\/www.hilase.cz\/en\/non-thermal-regimes-of-laser-annealing-of-semiconductor-nanostructures-crystallization-without-melting\/\",\"name\":\"Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting - 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