Advanced Laser-Based Semiconductor Wafer Manufacturing Processes

Project Number: CZ.01.01.01/01/24_063/0006908

The goal of the project is to conduct research and development of new laser processes for semiconductor technologies—specifically for processes involving silicon carbide (SiC) wafers—and new characterization methods. Laser processes and technologies are promising alternatives to current mechanical and chemical methods for processing SiC. They can thus provide a path to significantly reducing production costs, consumption of process materials, and environmental impact. New laser processes for silicon carbide semiconductor technologies also require new methods for characterizing the parameters of semiconductor wafers and manufacturing processes.