Jan Hrabovsky, Ph.D. student (Pulsed Laser Deposition) from the HiLASE Centre, is a co-author of a new paper on the topic of Comparative determination of atomic boron and carrier concentration in highly boron doped nano-crystalline diamond.
He collaborated on this research, published in the Diamond and Related Materials journal, with a group of researchers from the Institute of Physics of the CAS (Andrew Taylor, Petr Ashcheulov, Pavel Hubik, Zdenek Weiss, Ladislav Klimsa, Jaromír Kopecek and Vincent Mortet), the Faculty of Mathematics and Physics of the Charles University (Martin Veis), and Research Centre Rez (Jan Lorincik and Ivan Elantyev).
We have compared the total boron content and hole carrier concentration values obtained from various destructive and non-destructive quantification methods in boron doped nano-crystalline diamond films prepared over a range of doping levels, using microwave plasma enhanced chemical vapour deposition. Destructive secondary-ion mass spectrometry and relatively unreported glow discharge optical emission spectrometry were complemented by non-destructive Raman, spectroscopic ellipsometry and van der Pauw Hall measurements. Measurement techniques are discussed, including details of the glow discharge optical emission spectrometry technique; use of different laser powers and wavelengths, fitting parameters for Raman spectroscopy, and improved ellipsometry modelling. Finally, measured values are compared and discussed regarding their viability for estimation of total boron and electrically active boron in doped nano-crystalline diamond layers.